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FMBS549 PNP Low Saturation Transistor
August 2006
FMBS549
PNP Low Saturation Transistor
Features
* ThIs device is designed with high current gain and low saturation voltage with collector currents up to 2A continous. * Sourced from process PB.
tm
NC C1 E
B C pin #1 C
SuperSOTTM-6 single
Mark: .S1
Absolute Maximum Ratings *
Symbol
VCEO VCBO VEBO IC TJ TSTG Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
Ta = 25C unless otherwise noted
Parameter
Value
-30 -35 -5 -1 -2 150 - 55 ~ 150
Unit
V V V A A C C
Collector Current - Continuous - Peak Pulse Current Junction Temperature Storage Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Thermal Characteristics *
Symbol
PD RJA
Parameter
Total Device Dissipation, by RJA Thermal Resistance, Junction to Ambient
Value
700 180
Unit
mW C/W
* Device mounted on a 1 in2 pad of 2 oz copper.
(c)2006 Fairchild Semiconductor Corporation
1
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FMBS549 Rev. B
FMBS549 PNP Low Saturation Transistor
Electrical Characteristics*
Symbol
Off Characteristics BVCEO BVCBO BVEBO ICBO IEBO hFE
TC = 25C unless otherwise noted
Parameter
Conditions
Min.
-30 -35 -5.0
Max.
Units
V V V
Collector-Emitter Breakdown Voltage * IC = -10mA, IB = 0 Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current IC = -100A, IE = 0 IE = -100A, IC = 0 VCB = -30V, IE = 0 VCB = -30V, IE = 0, Ta = 100C VEB= -4.0V, IC=0 VCE = -2.0V, IC = -50mA VCE = -2.0V, IC = -500mA VCE = -2.0V, IC = -1A VCE = -2.0V, IC = -2A VCE = -0.8V, IC = -500mA IC = -250mA, IB = -25mA IC = -500mA, IB = -50mA IC = -1A, IB = -100mA IC = -2A, IB = -200mA IC = -1A, IB = -100mA IC = -1A, VCE = -2.0V IC = -100mA, VCE = -5V, f = 100MHz VCB = -10V, IE = 0, f = 1MHz
-100 -10 -100
nA A nA
On Characteristics * DC Current Gain 70 100 80 40 100 300
VCE (sat)
Collector-Emitter Saturation Voltage
-200 -350 -500 -750 -1.25 -1.0
mV mV mV mV V V
VBE (sat) VBE (on) fT Cob
Base-Emitter Saturation Voltage Base-Emitter On Voltage
Small Signal Characterics Current Gain Bandwidth Product Output Capacitance 100 25 MHz pF
* DC Item are tested by Pulse Test: Pulse Width300us, Duty Cycle2%
2 FMBS549 Rev. B
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FMBS549 PNP Low Saturation Transistor
Typical Characteristics
Collector- Emitter Voltage vs Collector current
800 700
4mA 3.5mA
Current Gain vs Collector Current
600
Vce = 2.0V
Collector Current, Ic [mA]
500
600 500 400 300 200 100 0 0 1 2
3mA 2.5mA 2mA 1.5mA 1mA Ib=0.5mA
H FE - CURRENT GAIN
400 300
125C
25C
200 100 0 0.0001
- 40C
3
4
5
Collector-Emitter Voltage, Vce[V]
0.001 0.01 0.1 1 I C - COLLECTOR CURRENT (A)
10
VBESAT -BASE-EMITTER SATURATION VOLTAGE(V)
V BEON- BASE-EMITTER ON VOLTAGE (V)
Base-Emitter On Voltage vs Collector Current
1.6
Vce = 2.0V
Base-Emitter Saturation Voltage vs Collector Current
1.6 1.4 1.2 1 0.8 0.6
125 C 25 C - 40 C
1.4 1.2 1
- 40 C
= 10
0.8 0.6
25 C
0.4 0.2 0.0001
125 C
0.4 0.2 0.001 0.01 0.1 1 I C - COLLECTOR CURRENT (A) 10
0.001 0.01 0.1 1 I C - COLLECTOR CURRENT (A)
10
VCESAT - COLLECTOR-EMITTER VOLTAGE (V)
Collector-Emitter Saturation Voltage vs Collector Current
1.2
= 10
- 40C
Input/Output Capacitance vs Reverse Bias Voltage
120
f Vce = 2.0V = 1.0MHz
1 0.8 0.6
CAPACITANCE (pf)
125C
100
C ibo
80 60 40 20 0 0.1
Cobo
25C
0.4 0.2 0 0.01
0.1 1 I C - COLLECTOR CURRENT (A)
10
0.5 1 10 20 V CE - COLLECTOR VOLTAGE (V)
50
100
3 FMBS549 Rev. B
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FMBS549 PNP Low Saturation Transistor
Package Dimensions
SuperSOTTM-6
Dimensions in Millimeters
4 FMBS549 Rev. B
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FMBS549 PNP Low Saturation Transistor FMBS549 PNP Low Saturation Transistor
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In Design
Definition
This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I20
5 FMBS549 Rev. B
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